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Infineon Technologies (BSZ180P03NS3E G)
PartNo:
BSZ180P03NS3E G
Manufacturers:
Infineon Technologies
Qty:
1684
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Description:
MOSFET P-Channel -30V MOSFET
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Product Information:
RoHS:
Details
Transistor Polarity:
P-Channel
Vds - Drain-Source Breakdown Voltage:
- 30 V
Vgs - Gate-Source Breakdown Voltage:
20 V
Id - Continuous Drain Current:
- 39.6 A
Rds On - Drain-Source Resistance:
18 Ohms
Configuration:
Single
Vgs th - Gate-Source Threshold Voltage:
- 1.9 V
Qg - Gate Charge:
20 nC
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
40 W
Mounting Style:
SMD/SMT
Package / Case:
TSDSON-8
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Reel
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MOSFET 12V 60A 104W 1.2mohm @ 10V
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